Study of cooling of hot carriers and intervalley scattering in In0.53Ga0.47As by subpicosecond Raman scattering
- 16 April 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (16) , 1570-1572
- https://doi.org/10.1063/1.103133
Abstract
Subpicosecond laser pulses have been used to excite and probe photoexcited hot‐electron plasma in In0.53 Ga0.47 As by Raman scattering. Hot‐electron temperatures have been measured as a function of the length of subpicosecond pulses. Cooling of the hot electrons is compared with a model calculation in which the cooling mechanism is dominated by intervalley scattering. The Γ to L intervalley deformation potential in In0.53 Ga0.47 As was determined to be around 3.5×108 eV/cm.Keywords
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