Stability of visible luminescence from porous silicon
- 24 May 1993
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (21) , 2667-2669
- https://doi.org/10.1063/1.109279
Abstract
The stability of the luminescence from porous Si has been improved by rapid thermal oxidation. As-prepared and oxidized samples have been compared by cathodoluminescence and photoluminescence. Electron beam excitation resulted in rapid decay of the porous Si emission from as-prepared samples. Photoluminescence measurements from as-prepared samples in oxygen showed a similar degradation. In contrast, the rapid thermal oxidized samples showed a dramatic improvement in stability under either electron beam or photoexcitation.Keywords
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