A new noise model of HFET with special emphasis on gate-leakage
- 1 February 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 16 (2) , 74-76
- https://doi.org/10.1109/55.386024
Abstract
A new temperature noise model, including the influence of a gate-leakage current on the noise performance of a microwave HFET, is presented. Based on an extended small-signal equivalent circuit of the HFET and three equivalent noise temperatures the noise model allows the exact prediction of the four noise parameters in a wide frequency range. The validity of the new model is demonstrated by noise measurements at room temperature. It is shown that the three equivalent noise temperatures are frequency independent and that one of them (T/sub p/) especially represents the noise contribution caused by the gate-current I/sub G/. The advantages of the new model are clearly demonstrated in comparison with a well established temperature noise model.Keywords
This publication has 5 references indexed in Scilit:
- An Accurate FET Modelling from Measured S-ParametersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependenceIEEE Transactions on Microwave Theory and Techniques, 1989
- An efficient method for computer aided noise analysis of linear amplifier networksIEEE Transactions on Circuits and Systems, 1976
- Theory of Noisy FourpolesProceedings of the IRE, 1956
- Nyquist's and Thevenin's Theorems Generalized for Nonreciprocal Linear NetworksJournal of Applied Physics, 1955