Distribution Profiles and Annealing Characteristics of Defects in GaAs Induced by Low-Energy FIB Irradiation
- 1 November 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (11A) , L2037
- https://doi.org/10.1143/jjap.27.l2037
Abstract
Distribution profiles and annealing characteristics of defects in GaAs induced by various (0.1–150 keV) energy Ga-focused ion-beam (FIB) irradiation were measured by means of deep-level transient spectroscopy and C-V carrier profiling to reveal the importance of low-energy beams for damage-free device processing. Four different electron traps were induced by the irradiation and observed at >2000 A, a depth far deeper than the ion range (about 15 A for 1 keV Ga). The defects were reduced by decreasing the ion energy and easily annealed out, and full recovery in carrier density occurred after annealing at 600°C.Keywords
This publication has 8 references indexed in Scilit:
- A 0–30 keV low-energy focused ion beam systemJournal of Vacuum Science & Technology B, 1988
- Defects induced by focused ion beam implantation in GaAsJournal of Vacuum Science & Technology B, 1988
- A variable energy focused ion beam system for i n s i t u microfabricationJournal of Vacuum Science & Technology B, 1988
- Characterization of ion beam etching induced defects in GaAsJournal of Vacuum Science & Technology B, 1988
- Damage and contamination-free GaAs and AlGaAs etching using a novel ultrahigh-vacuum reactive ion beam etching system with etched surface monitoring and cleaning methodJournal of Vacuum Science & Technology A, 1986
- Compensation mechanisms related to boron implantation in GaAsJournal of Applied Physics, 1982
- An annealing study of electron irradiation-induced defects in GaAsJournal of Applied Physics, 1980
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974