Chemical Treatment Effects of Si Surfaces in NH4OH:H2O2:H2O Solutions Studied by Spectroscopic Ellipsometry
- 1 September 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (9A) , L1189
- https://doi.org/10.1143/jjap.32.l1189
Abstract
Chemically treated Si surfaces in 1NH4OH:XH2O2:5H2O (X=0 and 1) solutions at 80°C have been studied using spectroscopic ellipsometry (SE). The SE data clearly indicate that the X=0 solution results in surface roughening while the X=1 solution, in surface chemical oxidation. It is found that chemical oxidation occurs immediately upon immersing the sample in the X=1 solution. The thickness of the oxide is also found to show a saturated value of ∼11 Å against immersion time t.Keywords
This publication has 12 references indexed in Scilit:
- HF-Treated (111), (110) and (100)Si Surfaces Studied by Spectroscopic EllipsometryJapanese Journal of Applied Physics, 1993
- HF- and NH4OH-treated (111)Si surfaces studied by spectroscopic ellipsometryJournal of Applied Physics, 1993
- Study of Si Etch Rate in Various Composition of SC1 SolutionJapanese Journal of Applied Physics, 1993
- Spectroscopic-Ellipsometry Analysis of Si Films Prepared by RF SputteringJapanese Journal of Applied Physics, 1992
- The Relationship of the Silicon Surface Roughness and Gate Oxide Integrity in NH4OH/H2O2 MixturesJapanese Journal of Applied Physics, 1992
- A Mechanistic Study of Silicon Etching in NH 3 / H 2 O 2 Cleaning SolutionsJournal of the Electrochemical Society, 1990
- An In Situ Ellipsometric Study of Aqueous NH 4 OH Treatment of SiliconJournal of the Electrochemical Society, 1989
- Model dielectric constants of Si and GePhysical Review B, 1988
- Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eVPhysical Review B, 1983
- Ellipsometry for Measurements at and below Monolayer CoverageJournal of the Optical Society of America, 1968