Optical absorption and photoconductivity in thermally grown SiO2 films
- 1 April 1978
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 49 (4) , 2499-2502
- https://doi.org/10.1063/1.325099
Abstract
Optical transmission of unbacked thin films of thermally grown SiO2 films were measured in the vacuum uv. The absorption data indicate a band gap of 8.0±0.2 eV for SiO2, and this value is confirmed by measurements of electron and hole photoconductivity and positive charging thresholds in MOS samples. The observation of hole photoconductivity near 8 eV shows that the uppermost valence levels in SiO2 are not nearly atomic, but form a band with sufficient orbital overlap that readily transport holes at room temperature.This publication has 26 references indexed in Scilit:
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