A study of residual stress distribution through the thickness of p/sup +/ silicon films (thermal oxidation effects)
- 1 July 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 40 (7) , 1245-1250
- https://doi.org/10.1109/16.216428
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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