Fractal model of a porous semiconductor
- 31 July 2000
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 162-163, 122-132
- https://doi.org/10.1016/s0169-4332(00)00180-x
Abstract
No abstract availableKeywords
This publication has 29 references indexed in Scilit:
- Porous Silicon Physics and Device Applications: A Status ReportPhysica Status Solidi (a), 1998
- The structural and luminescence properties of porous siliconJournal of Applied Physics, 1997
- Experimental determination of the electrical band-gap energy of porous silicon and the band offsets at the porous silicon/crystalline silicon heterojunctionPhysical Review B, 1997
- Photoluminescence and electroluminescence from porous siliconJournal of Luminescence, 1996
- Size, shape, and composition of luminescent species in oxidized Si nanocrystals and H-passivated porous SiPhysical Review B, 1995
- Technologies for porous silicon devicesSemiconductor Science and Technology, 1995
- X-ray photoelectron spectroscopy and x-ray absorption near-edge spectroscopy study of SiO2/Si(100)Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Energy band lineup at the porous-silicon/silicon heterointerface measured by electron spectroscopyApplied Physics Letters, 1994
- Electrical band gap of porous siliconApplied Physics Letters, 1994
- Surface Structures and Photoluminescence Mechanisms of Porous SiJapanese Journal of Applied Physics, 1994