Voltage-dependent voltage-acceleration of oxide breakdown for ultra-thin oxides
- 11 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 541-544
- https://doi.org/10.1109/iedm.2000.904375
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Ultra-thin oxide reliability for ULSI applicationsSemiconductor Science and Technology, 2000
- Gate oxide reliability projection to the sub-2 nm regimeSemiconductor Science and Technology, 2000
- On the breakdown statistics of very thin SiO2 filmsThin Solid Films, 1990
- Degradation and Breakdown of Gate Oxides in VLSI DevicesPhysica Status Solidi (a), 1989