Gate oxide reliability projection to the sub-2 nm regime
- 1 May 2000
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 15 (5) , 455-461
- https://doi.org/10.1088/0268-1242/15/5/304
Abstract
The important components of reliability projection are investigated. Acceleration parameters are obtained for a 1.6 nm oxide with a soft breakdown criterion. Based on the physical percolation model, the voltage scaling factor for time to breakdown is found to increase with lower voltage, explaining the experimental observation of 6.7 ± 0.4 dec V-1 for the 1.6 nm oxide. The distribution of breakdown times is shown to be sensitive to thickness variation across the test wafer, and a Weibull slope of 1.38 ± 0.1 was obtained. The temperature dependence of the time to breakdown was found to be non-Arrhenius and to have a slope of 0.02 dec °C-1. Using these parameters, the 1.6 nm oxide was found to have a 10 year lifetime with a 100 ppm failure rate for 1.3 V operation at 100 °C. Our understanding of soft breakdown is described as well as an investigation of device operation after soft breakdown, which may further improve the reliability projection.Keywords
This publication has 6 references indexed in Scilit:
- Ultra-thin gate dielectrics: they break down, but do they fail?Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Investigation of temperature acceleration of thin oxide time-to-breakdownMicroelectronic Engineering, 1999
- Field and temperature dependence of TDDB of ultrathin gate oxideIEEE Electron Device Letters, 1999
- New insights in the relation between electron trap generation and the statistical properties of oxide breakdownIEEE Transactions on Electron Devices, 1998
- Soft breakdown of ultra-thin gate oxide layersIEEE Transactions on Electron Devices, 1996
- Electrical breakdown in thin gate and tunneling oxidesIEEE Transactions on Electron Devices, 1985