Se + and Sn + implants for n + layers in GaAs
- 1 March 1985
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 7-8, 418-422
- https://doi.org/10.1016/0168-583x(85)90591-9
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- AlN capped annealing of Se and Sn implanted semi-insulating GaAsElectronics Letters, 1983
- Multiply scanned electron beam annealing of dual implants in GaAsRadiation Effects, 1983
- Transient annealing of selenium-implanted gallium arsenide using a graphite strip heaterApplied Physics Letters, 1982
- Transient annealing of ion implanted GaAsMicroelectronics Journal, 1982
- Electron beam annealing of selenium-implanted gallium arsenideApplied Physics Letters, 1981
- Radiation Annealing of GaAs Implanted with SiJapanese Journal of Applied Physics, 1981