Study of Surface Processes in the Digital Etching of GaAs
- 1 July 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (7R)
- https://doi.org/10.1143/jjap.31.2212
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Layer-By-Layer Controlled Digital Etching by Means of an Electron-Beam-Excited Plasma SystemJapanese Journal of Applied Physics, 1990
- Digital etching of GaAs: New approach of dry etching to atomic ordered processingApplied Physics Letters, 1990
- Induced Defects in GaAs Etched by Low Energy Ions in Electron Beam Excited Plasma (EBEP) SystemJapanese Journal of Applied Physics, 1989
- New High Current Low Energy Ion SourceJapanese Journal of Applied Physics, 1986