Induced Defects in GaAs Etched by Low Energy Ions in Electron Beam Excited Plasma (EBEP) System
- 1 November 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (11R)
- https://doi.org/10.1143/jjap.28.2391
Abstract
Ion beam etching (IBE) of GaAs with a source gas of Cl2 or Ar was carried out at a low energy ranging from 5 to 130 eV by using an electron-beam-excited-plasma system, and residual defect centers were investigated by means of deep-level transient spectroscopy (DLTS). Foul kinds of defect centers labeled L1 L2, L3, L5 with activation energies of 0.31, 0.45, 0.58, 0.48 eV, respectively, were resolved. Three of them were associated with damages induced by IBE and it was found that they have different thresholds for their generation, i.e., 60, 40 and 20 eV for L1, L2 and L3, respectively. It is necessary to reduce ion energy to less than 20 eV for perfect damage-free IBE of GaAs.Keywords
This publication has 12 references indexed in Scilit:
- Characterization of damage on GaAs in a reactive ion beam etching system using Schottky diodesJournal of Vacuum Science & Technology B, 1988
- Characterization of ion beam etching induced defects in GaAsJournal of Vacuum Science & Technology B, 1988
- New high current low energy ion sourceJournal of Vacuum Science & Technology B, 1987
- Profiling of defects using deep level transient spectroscopyJournal of Applied Physics, 1986
- Surface Damage on GaAs Induced by Reactive Ion Etching and Sputter EtchingJournal of the Electrochemical Society, 1986
- Irradiation-induced defects in GaAsJournal of Physics C: Solid State Physics, 1985
- Effects of dry etching on GaAsJournal of Vacuum Science & Technology B, 1983
- Sputter Etching Effects on GaAs Schottky JunctionsJournal of the Electrochemical Society, 1982
- Energy dependence of deep level introduction in electron irradiated GaAsJournal of Applied Physics, 1980
- Electron traps in bulk and epitaxial GaAs crystalsElectronics Letters, 1977