InGaAsP(1.3 μm)/InP vertical-cavity surface-emitting laser grown by metalorganic vapor phase epitaxy
- 5 March 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (10) , 889-891
- https://doi.org/10.1063/1.102619
Abstract
We report InGaAsP/InP vertical‐cavity surface‐emitting lasers (VCSELs) with an emission wavelength near 1.3 μm grown by metalorganic vapor phase epitaxy. The VCSEL structure contains a double‐heterostructure cavity, a metal mirror, and a SiO2/Si dielectric stack (three pairs) mirror with a measured reflectivity of 98%. A threshold current as low as 5 mA for 15‐μm‐diam devices with a 1‐μm‐thick active layer at 77 K was achieved, which is close to the best reported value (6 mA) within the accuracy of the pulse measurement. The highest operating temperature was 220 K.Keywords
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