Early stages of the HFCVD process on multi-vicinal silicon surfaces studied by electron microscopy probes (SEM, TEM)
- 1 September 2001
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 10 (9-10) , 1612-1616
- https://doi.org/10.1016/s0925-9635(01)00420-4
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Direct Local Epitaxy of Diamond on Si(100) and Surface-Roughening-Induced Crystal MisorientationPhysical Review Letters, 2000
- A Nucleation Site and Mechanism Leading to Epitaxial Growth of Diamond FilmsScience, 2000
- Diamond Films: Recent DevelopmentsMRS Bulletin, 1998
- Silicon Etching during the HFCVD Diamond GrowthThe Journal of Physical Chemistry B, 1998
- Mechanisms of CVD diamond nucleation and growth on mechanically scratched and virgin Si(100) surfacesDiamond and Related Materials, 1997
- Plan-view Si(111) samples for surface science and TEM studiesApplied Surface Science, 1993
- Diamond nucleation on cleaved Si(111)Journal of Applied Physics, 1992
- Selective growth of diamond crystals on the apex of silicon pyramidsJournal of Materials Research, 1992
- Role of bond-strain in the chemistry of hydrogen on the Si(100) surfaceSurface Science, 1992
- Influence of substrate topography on the nucleation of diamond thin filmsApplied Physics Letters, 1991