Selective growth of diamond crystals on the apex of silicon pyramids

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Abstract
Diamond crystals have been selectively grown on the apex of anisotropically chemically etched silicon pyramids. A novel process sequence is developed which exposes a patterned sharp apex of silicon pyramids surrounded by thermally grown silicon dioxide to a high pressure microwave plasma-assisted chemical vapor deposition (HPMACVD) process where the reactant feed gases are methane and hydrogen. The nucleation rate of diamond is very high on the sharp edge of a silicon mesa structure or an apex of a silicon pyramid, as anticipated. Selective growth of diamond particles on the apex of silicon pyramids fabricated using various approaches was analyzed by scanning electron microscopy.