Micromachined silicon tunnel sensor for motion detection
- 7 January 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (1) , 100-102
- https://doi.org/10.1063/1.104432
Abstract
We have used the extreme sensitivity of electron tunneling to variations in electrode separation to construct a novel, compact displacement transducer. Electrostatic forces are used to control the separation between the tunneling electrodes, thereby eliminating the need for piezoelectric actuators. The entire structure is composed of micromachined silicon single crystals, including a folded cantilever spring and a tip. Measurements of displacement sensitivity and noise are reported. This device offers a substantial improvement over conventional technology for applications which require compact, highly sensitive transducers.Keywords
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