Band structure evolution in InAs overlayers on GaAs(110)
- 1 September 1996
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 104-105, 608-614
- https://doi.org/10.1016/s0169-4332(96)00210-3
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Investigation of InAs submonolayer and monolayer structures on GaAs(100) and (311) substratesJournal of Applied Physics, 1993
- Reflection high-energy electron diffraction/transmission electron microscopy observation of growth of InAs on GaAs (110) by molecular beam epitaxyJournal of Crystal Growth, 1993
- Quantum well laser with single InAs monolayer in active regionElectronics Letters, 1992
- Formation and morphology of InAs/GaAs heterointerfacesPhysical Review B, 1992
- Vertical cavity surface emitting laser with a submonolayer thick InAs active layerApplied Physics Letters, 1992
- Molecular beam epitaxial growth of GaAs and other compound semiconductorsThin Solid Films, 1991
- Molecular-beam epitaxial growth of InAs/GaAs superlattices on GaAs substrates and its application to a superlattice channel modulation-doped field-effect transistorJournal of Applied Physics, 1991
- Observation of quantum size effect in the resistivity of thin, gray tin epilayersApplied Physics Letters, 1989
- Microscopical Structuring of Solids by Molecular Beam Epitaxy—Spatially Resolved Materials SynthesisAngewandte Chemie International Edition in English, 1988
- On the practical applications of MBE surface phase diagramsJournal of Crystal Growth, 1987