Schottky barrier diodes using thick, well-characterized boron phosphide wafers
- 1 July 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (1) , 64-66
- https://doi.org/10.1063/1.96406
Abstract
Thick, single crystalline boron phosphide (BP) wafers (∼200–300 μm) grown by the chemical vapor deposition technique were characterized by the measurements of lattice constants by the Bond method and electrical properties by the Van der Pauw method. Two types of Schottky barrier diodes, i.e., n‐BP‐Sb and p‐BP‐Au, were fabricated. The n‐BP‐Sb diode has the highest reverse voltage of 5 V and a barrier height of 1.4 eV, while those of the p‐BP‐Au diode are 1 V and 1.2 eV. These results suggest that device application of BP is promising.Keywords
This publication has 9 references indexed in Scilit:
- Thermoelectric power of boron phosphide at high temperaturesPhysica Status Solidi (a), 1980
- Diffusion Layers Formed in Si Substrates during the Epitaxial Growth of BP and Application to DevicesJournal of the Electrochemical Society, 1978
- Dielectric Constant and Refractive Index of Boron MonophosphideJapanese Journal of Applied Physics, 1976
- Thermal Expansion Coefficient of Boron MonophosphideJapanese Journal of Applied Physics, 1976
- Metallic Impurity-Activated Crystal Growth of Boron Phosphide by Chemical Vapor Deposition and Its Physical PropertiesBulletin of the Chemical Society of Japan, 1975
- Epitaxial growth of BP compounds on Si substrates using the B2H6-PH3-H2 systemJournal of Crystal Growth, 1974
- Hetero-Epitaxial Growth of Boron Monophosphide on Silicon Substrate Using B2H6-PH3-H2SystemJapanese Journal of Applied Physics, 1974
- Vapor growth of boron monophosphide using open and closed tube processesJournal of Crystal Growth, 1972
- Metal-semiconductor surface barriersSolid-State Electronics, 1966