Physical properties of amorphous Si: The role of annealing
- 1 January 1975
- journal article
- Published by Springer Nature in Czechoslovak Journal of Physics
- Vol. 25 (1) , 83-90
- https://doi.org/10.1007/bf01589675
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Impurity effects on the structure of amorphous silicon and germanium prepared in various waysPhilosophical Magazine, 1973
- Determination of Optical Constants: a‐SiPhysica Status Solidi (b), 1973
- Optical and photoelectric properties of amorphous siliconJournal of Non-Crystalline Solids, 1972
- Elastic and Anelastic Behavior of Ion-Implanted SiliconApplied Physics Letters, 1972
- Properties of glow-discharge deposited amorphous germanium and siliconJournal of Non-Crystalline Solids, 1970
- The fundamental absorption of amorphous Ge, Si and GeSi alloysJournal of Non-Crystalline Solids, 1970
- Structural, Optical, and Electrical Properties of Amorphous Silicon FilmsPhysical Review B, 1970
- Evidence of Voids Within the As-Deposited Structure of Glassy SiliconPhysical Review Letters, 1969
- Optical constants of amorphous silicon films near the main absorption edgeThin Solid Films, 1968
- Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°KPhysical Review B, 1955