Magnetotransport and electronic subband studies in Si xGe 1−x Si
- 31 July 1996
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 99 (1) , 47-51
- https://doi.org/10.1016/0038-1098(96)00078-6
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Very high mobility two-dimensional hole gas in Si/GexSi1−x/Ge structures grown by molecular beam epitaxyApplied Physics Letters, 1993
- Electron transport properties of Si/SiGe heterostructures: Measurements and device implicationsApplied Physics Letters, 1993
- Electron cyclotron resonance in silicon/silicon germanium heterostructuresApplied Physics Letters, 1993
- Observation of quantum confinement effects in strained Si0.84Ge0.16/Si quantum wells at room temperatureApplied Physics Letters, 1993
- Spectral blue shift of photoluminescence in strained-layer Si1−xGex/Si quantum well structures grown by gas-source Si molecular beam epitaxyApplied Physics Letters, 1992
- Measurement of elastic relaxation in cross-sectional transmission electron microscopy of GexSi1−x/Si strained-layer superlatticesApplied Physics Letters, 1992
- Observation of strong Si/Si1−xGex narrow quantum-well near-edge luminescence under applied hydrostatic pressureApplied Physics Letters, 1992
- Observation of the fractional quantum Hall effect in Si/SiGe heterostructuresApplied Physics Letters, 1992
- High electron mobility in modulation-doped Si/SiGeApplied Physics Letters, 1991
- Modulation doping in Ge(x)Si(1−x)/Si strained layer heterostructures: Effects of alloy layer thickness, doping setback, and cladding layer dopant concentrationJournal of Vacuum Science & Technology A, 1985