Oxygen-Related Donors Generated at 800°C in CZ-Si
- 1 September 1980
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 19 (9) , L544-546
- https://doi.org/10.1143/jjap.19.l544
Abstract
Two types of CZ-Si crystals annealed at 800°C were studied with infrared absorption (IR), resistivity, photoluminescence (PL) and TEM. The crystal containing much carbon atoms showed rapid reduction of interstitial oxygen content by the annealing, generated extra donors and showed a new spectral band due to them in PL. The observed extra donors were attributed to very small silicon-oxygen complexes in relation to the existence of carbon atoms. The carbon-free crystal showed no characteristic changes in PL spectrum and its resistivity, while appearance of cristobalite precipitates was detected by TEM and IR measurement.Keywords
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