Studies of thermally-oxidized GaAs by transmission electron microscopy
- 1 April 1978
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine A
- Vol. 37 (4) , 489-500
- https://doi.org/10.1080/01418617808239185
Abstract
Thermally oxidized GaAs has been examined using transmission electron microscopy to determine the structure and phases of the resulting oxide films. At growth temperatures of 500°C and above, the films were composed mainly of twinned poly-crystalline β-Ga 2 O 3 , the amount of crystallinity increasing with growth temperature. An amorphous oxide film was formed at a low growth temperature (450°C). No arsenic-containing phases were detected in any oxide film.Keywords
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