Structure and composition of native oxides on GaAs
- 31 July 1974
- journal article
- research article
- Published by Elsevier in Thin Solid Films
- Vol. 22 (3) , S39-S43
- https://doi.org/10.1016/0040-6090(74)90310-1
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- A Rutherford scattering study of the chemical composition of native oxides on GaPJournal of Physics and Chemistry of Solids, 1973
- Rapid determination of semiconductor doping profiles in MOS structuresSolid-State Electronics, 1973
- The Anodic Oxidation of GaAs in Aqueous H[sub 2]O[sub 2] SolutionJournal of the Electrochemical Society, 1973
- Influence of implantation temperature and surface protection on tellurium implantation in GaAsApplied Physics Letters, 1972
- In-depth profiles of phosphorus ion-implanted silicon by Auger spectroscopy and secondary ion emissionSurface Science, 1972
- Preliminary Results on the Oxidation of GaAs and GaP during Chemical EtchingJournal of the Electrochemical Society, 1971
- Electrical properties of Cd, Zn and S ion-implanted layers in GaAsRadiation Effects, 1970
- An Amorphous Modification of Gallium‐Arsenic (V) OxideJournal of the American Ceramic Society, 1963