Raman study of phosphorous-implanted and pulsed laser-annealed GaAs

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Abstract
Raman spectroscopy has been used to study structural disorder in phosphorous ion-implanted GaAs. Line-shape asymmetry of the one-phonon mode and the oscillator strength of the two-phonon combination spectra are used to characterize the disorder. This analysis permits a rough identification of the threshold for amorphization. Localized vibrational mode of phosphorous impurities in ion-implanted and pulsed laser-annealed (PLA) GaAs is reported and its intensity variation with fluence of the implant is studied. The softening of the LO-phonon mode in ion-implanted, PLA GaAs is explained as an inherent impurity effect. The presence of a partially annealed deep layer is investigated by observing a disorder activated mode in the Raman spectrum and by an enhancement in the intensity of the forbidden TO phonon. The occurrence of defects on the surface after PLA is investigated by the wavelength dependence of the LO-phonon softening.

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