Modification of a-Si(:H) by Thermally Generated Atomic Hydrogen: A Real Time Spectroscopic Ellipsometry Study of Si Bond Breaking

This publication has 9 references indexed in Scilit:

• In situ determination of dielectric functions and optical gap of ultrathin amorphous silicon by real time spectroscopic ellipsometry
  Applied Physics Letters, 1991
• Stability of hydrogenated amorphous silicon deposited at high temperatures with a remote hydrogen plasma
  Applied Physics Letters, 1991
• Waveform analysis with optical multichannel detectors: Applications for rapid-scan spectroscopic ellipsometry
  Review of Scientific Instruments, 1991
• Narrow Band-Gap a-Si:H with Improved Minority Carrier-Transport Prepared by Chemical Annealing
  Japanese Journal of Applied Physics, 1991
• Hydrogen chemical potential and structure ofa-Si:H
  Physical Review B, 1991
• Chemical-equilibrium model of optimala-Si:H growth fromSiH4
  Physical Review B, 1990
• Optical dielectric function of hydrogenated amorphous silicon: Tetrahedron model and experimental results
  Physical Review B, 1988
• Hydrogen diffusion in amorphous silicon
  Philosophical Magazine Part B, 1987
• Optical dispersion relations for amorphous semiconductors and amorphous dielectrics
  Physical Review B, 1986