Hydrogen chemical potential and structure ofa-Si:H
- 15 January 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 43 (3) , 2454-2457
- https://doi.org/10.1103/physrevb.43.2454
Abstract
It is proposed that the chemical equilibrium of hydrogen is an important factor in determining the structure of thin films deposited from silane-hydrogen plasmas. Hydrogen interacts with the silicon network to optimize the local bonding configurations. Raising the effective hydrogen chemical potential reduces the disorder of hydrogenated amorphous silicon films and eventually induces a transition to crystallinity.Keywords
This publication has 17 references indexed in Scilit:
- Chemical-equilibrium model of optimala-Si:H growth fromPhysical Review B, 1990
- Hydrogen-mediated model for defect metastability in hydrogenated amorphous siliconPhysical Review B, 1989
- Chemical-equilibrium model of impurity incorporation inn-typea-Si:HPhysical Review Letters, 1989
- Mechanisms of thermal equilibration in doped amorphous siliconPhysical Review B, 1988
- Gas and surface processes leading to hydrogenated amorphous silicon filmsSolar Cells, 1987
- Band tails, entropy, and equilibrium defects in hydrogenated amorphous siliconPhysical Review Letters, 1987
- Thermal-equilibrium processes in amorphous siliconPhysical Review B, 1987
- Hydrogenated microvoids and light-induced degradation of amorphous-silicon solar cellsApplied Physics A, 1986
- Film formation mechanisms in the plasma deposition of hydrogenated amorphous siliconJournal of Applied Physics, 1986
- Formation kinetics and control of microcrystallite in μc-Si:H from glow discharge plasmaJournal of Non-Crystalline Solids, 1983