Effects of band non-parabolicity on electron drift velocity in silicon above room temperature
- 1 October 1975
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 36 (10) , 1129-1133
- https://doi.org/10.1016/0022-3697(75)90055-4
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Determination of intervalley electron-phonon deformation potential constants in n -silicon by analysis of high electric field transport propertiesApplied Physics Letters, 1974
- Impurity and Lattice Scattering Parameters as Determined from Hall and Mobility Analysis in-Type SiliconPhysical Review B, 1973
- Temperature dependence of electron drift velocity in siliconJournal of Applied Physics, 1973
- Bloch states mixing in Si conduction bandPhysics Letters A, 1973
- Non‐Even Dependence of Conductivity of Hot Electrons on Magnetic Field Strength in Many‐Valley SemiconductorsPhysica Status Solidi (b), 1972
- Negative differential mobility of electrons in germanium: A Monte Carlo calculation of the distribution function, drift velocity and carrier population in the (111) and (100) minimaJournal of Physics C: Solid State Physics, 1971
- Monte Carlo determination of electron transport properties in gallium arsenideJournal of Physics and Chemistry of Solids, 1970
- Temperature dependence of hot electron drift velocity in silicon at high electric fieldSolid-State Electronics, 1968
- The anisotropy of conductivity of n-type germanium in strong d.c. fieldsThe European Physical Journal A, 1965
- Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic ScatteringPhysical Review B, 1956