The correlation between gate current and substrate current in 0.1 /spl mu/m NMOSFET's
- 1 October 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 15 (10) , 418-420
- https://doi.org/10.1109/55.320987
Abstract
The correlation between gate and substrate currents in NMOSFET's with effective channel length, L/sub eff/, down to 0.1 /spl mu/m is investigated within the general framework of the lucky-electron model. It Is found that the correlation coefficient, /spl Phi/b//spl Phi//sub i/, decreases with decreasing L/sub eff/ in the 0.1 /spl mu/m regime, where /spl Phi//sub b/ is the effective Si-SiO/sub 2/ barrier height for channel hot-electrons, and /spl Phi//sub i/ is the effective threshold potential for impact ionization. Furthermore, this effect becomes stronger in NMOSFET's with shorter L/sub eff/. These experimental results suggest the need for further investigation on specific assumptions in the lucky-electron model to understand hot-electron behavior and impact ionization-mechanisms in 0.1 /spl mu/m-scale NMOSFET's.Keywords
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