Ionic doping and inversion of the characteristic of thin film porous Al2O3 humidity sensor
- 1 January 1998
- journal article
- Published by Elsevier in Sensors and Actuators B: Chemical
- Vol. 46 (1) , 35-41
- https://doi.org/10.1016/s0925-4005(97)00323-7
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- A Model for the Incorporation of Electrolyte Species into Anodic AluminaJournal of the Electrochemical Society, 1996
- Mathematical Models for the Anodization Conditions and Structural Features of Porous Anodic Al2 O 3 Films on AluminumJournal of the Electrochemical Society, 1995
- Characterization of porous Al2O3SiO2/Si sensor for low and medium humidity rangesSensors and Actuators B: Chemical, 1995
- Surface conduction mechanisms and the electrical properties of Al2O3 humidity sensorApplied Surface Science, 1987
- Carrier-transfer mechanisms and Al2O3sensors for low and high humiditiesJournal of Physics D: Applied Physics, 1986
- Humidity sensitive MIS structureJournal of Physics E: Scientific Instruments, 1985
- On the origin of the humidity-sensitive electrical properties of porous aluminium oxide (sensor application)Journal of Physics D: Applied Physics, 1984
- Effect of moisture on the dielectric properties of porous alumina filmsSensors and Actuators, 1984
- A study of capacitance and resistance characteristics of an Al2O3humidity sensorInternational Journal of Electronics, 1982
- Effects of Water Vapour on the Electrical Properties of Anodized AluminiumNature, 1953