Bulk lifetime determination of etch-thinned InSb wafers for two-dimensional infrared focal plane array
- 1 April 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (4) , 809-812
- https://doi.org/10.1109/16.127469
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Quantum efficiency and crosstalk of an improved backside-illuminated indium antimonide focal-plane arrayIEEE Transactions on Electron Devices, 1991
- Method for simultaneous measurement of diffusivity lifetime, and diffusion length, with application to heavily doped siliconIEEE Electron Device Letters, 1989
- Millimeter-Wave Heterojunction MITATT DiodesIEEE Transactions on Microwave Theory and Techniques, 1987
- Evaluation Of An Indium Antimonide Hybrid Focal Plane Array For Ground-Based Infrared AstronomyOptical Engineering, 1987
- An AES Evaluation of Cleaning and Etching Methods for InSbJournal of the Electrochemical Society, 1982
- High performance Be+implanted InSb photodiodesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1981
- Carrier Lifetime in Indium AntimonidePhysical Review B, 1961