After-Corrosion Suppression Using Low-Temperature Al-Si-Cu Etching
- 1 July 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (7R)
- https://doi.org/10.1143/jjap.30.1567
Abstract
The authors investigated the low-temperature etching effect on Al-Si-Cu after-corrosion. The after-corrosion extent was evaluated from the corrosion point density generated on the rinsed Al-Si-Cu stripes after dry etching. As the etching temperature was reduced, after-corrosion was suppressed. In order to study the low-temperature etching effect, the authors analyzed the Cl compounds remaining on the Al-Si-Cu film by thermal desorption spectroscopy (TDS). TDS revealed that the Cl concentration remaining on the Al-Si-Cu film etched at -60°C after rinsing in water was smaller than that remaining on the film etched at 30°C. Consequently, suppression of after-corrosion by low temperature etching could be attributed to the smaller number of Al-Cu bonds remaining in the Al-Si-Cu etch surface after removal of the AlCl x layer by rinsing with water. This fact is due to the reduction of chemical reaction and diffusion rate by lowering the substrate temperature.Keywords
This publication has 8 references indexed in Scilit:
- New technology on tri-level resist doped with dye for submicron photolithographic processMicroelectronic Engineering, 1983
- Plasma beam studies of Si and Al etching mechanismsJournal of Vacuum Science and Technology, 1982
- High resolution trilevel resistJournal of Vacuum Science and Technology, 1982
- Plasma etch chemistry of aluminum and aluminum alloy filmsPlasma Chemistry and Plasma Processing, 1982
- Reactive ion etching induced corrosion of Al and Al-Cu filmsJournal of Applied Physics, 1981
- Effect of texture and grain structure on electromigration in Al-0.5%Cu thin filmsThin Solid Films, 1981
- Electromigration effects in aluminum alloy metallizationJournal of Electronic Materials, 1974
- Chlorine reactions on the Si (111) surfaceSurface Science, 1969