A low energy limit to boron channeling in silicon
- 1 May 1991
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (9) , 6369-6372
- https://doi.org/10.1063/1.348838
Abstract
Both experimental profiles and Monte Carlo simulations have shown that a channeling tail is unavoidable in the implantation of boron into silicon at 5 keV, even though high‐index channeling does not occur. A model is proposed to explain this disappearance of high‐index channeling at low energies, based on simple geometrical considerations of ion deflections predicted by a binary collision potential.This publication has 8 references indexed in Scilit:
- Monte Carlo Simulation of Ion Implantation in Crystalline Silicon Using MarloweJournal of the Electrochemical Society, 1988
- Channeling effect for low energy ion implantation in SiNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Channeling of ions near the silicon 〈001〉 axisApplied Physics Letters, 1985
- Channeling in low energy boron ion implantationApplied Physics Letters, 1984
- Computer simulation of atomic-displacement cascades in solids in the binary-collision approximationPhysical Review B, 1974
- Channeling and related effects in the motion of charged particles through crystalsReviews of Modern Physics, 1974
- Single-crystal sputtering including the channeling phenomenonCanadian Journal of Physics, 1968
- THE CHANNELING OF ENERGETIC ATOMS IN CRYSTAL LATTICESApplied Physics Letters, 1963