Characteristics of the electroluminescence and photoluminescence emission of erbium ions doped in InP and the energy transfer mechanism

Publisher Website
Google Scholar
Abstract
The characteristics of impact excitation of the 1.54‐μm emission due to intrashell transitions of 4f electrons of erbium atoms (4I13/2 →4 I15/2) doped into InP were investigated in comparison with the photoluminescence (PL) emission of the same peak from the same sample. The thermal quenching of this Er‐related electroluminescence (EL) emission was found to be very small in contrast to the large thermal quenching of the PL emission. The EL emission intensity at room temperature was half that at 77 K, and the temperature dependence of the emission energy and the spectral width was very small. Due to almost temperature‐independent nature of the impact excitation process, the quenching of the EL emission intensity reflected directly that of the fluorescence efficiency of this intrashell transitions of Er 4f electrons. Using this result, the temperature dependence of the PL energy transfer efficiency was also obtained. It was also found that the fine structure of the 1.54‐μm emission was different between EL and PL. It was speculated that Er atoms on different lattice sites, which were in different crystal fields, were excited depending on excitation processes.