Metal-intrinsic semiconductor-semiconductor structures using polycrystalline diamond films

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Abstract
The electrical characteristics of a metal‐intrinsic semiconductor‐semiconductor structure formed by Al‐undoped polycrystalline diamond‐B‐doped polycrystalline diamond were investigated. Boron‐doped diamond films containing B‐to‐C ratios of 400 and 4000 ppm in gas phase were deposited on (111)‐oriented B‐doped Si substrates. Subsequently, undoped diamond layers were deposited on the B‐doped diamond films for 60 min. The existence of a bilayer structure in terms of the atomic B concentration was confirmed by a secondary‐ion mass spectroscopy. Significant improvements in the rectifying characteristics could be obtained with the introduction of an undoped diamond layer.