Temperature dependence of damping in high-speed quantum-well lasers
- 27 July 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (4) , 396-398
- https://doi.org/10.1063/1.107894
Abstract
The temperature dependence of damping in quantum‐well lasers has been investigated. The lasers with large K factors at room temperature show a rapid increase of the K factor with temperature. The temperature dependence of the K factor is larger for lasers with wider separate confinement heterostructure region, fewer wells, and narrower quantum‐well width. The carrier transport in quantum‐well structures is responsible for the excess increase of the K factor at high temperatures.Keywords
This publication has 17 references indexed in Scilit:
- Effects of carrier transport on relative intensity noise and critique of K factor predictions of modulation responseElectronics Letters, 1992
- Effects of carrier transport on high-speed quantum well lasersApplied Physics Letters, 1991
- Single quantum well strained InGaAs/GaAs lasers with large modulation bandwidth and low dampingElectronics Letters, 1991
- High-speed and ultralow-chirp 11.55 mu m multiquantum well lambda /4-shifted DFB lasersIEEE Journal of Quantum Electronics, 1991
- Extremely reduced nonlinear K -factor in high-speed strained layer multiquantum well DFB lasersElectronics Letters, 1991
- Intrinsic modulation bandwidth in ultra-high-speed 1.3 and 1.55 μm GaInAsP DFB lasersElectronics Letters, 1989
- Thermionic emission and Gaussian transport of holes in a GaAs/As multiple-quantum-well structurePhysical Review B, 1988
- Precise estimation of linewidth reduction in wavelength-detuned DFB semiconductor lasersElectronics Letters, 1988
- Frequency response of 1.3µm InGaAsP high speed semiconductor lasersIEEE Journal of Quantum Electronics, 1987
- Transport properties of -type metalorganic chemical-vapor-depositedPhysical Review B, 1984