Transient two-dimensional numerical analysis of the charge-pumping experiment
- 30 September 1992
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 19 (1-4) , 687-690
- https://doi.org/10.1016/0167-9317(92)90522-s
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Adaptation of the charge pumping technique to gated p-i-n diodes fabricated on silicon on insulatorIEEE Transactions on Electron Devices, 1991
- Charge-pumping spectroscopy with pulsed interface probingIEEE Transactions on Electron Devices, 1990
- Characterization of front and back Si-SiO/sub 2/ interfaces in thick- and thin-film silicon-on-insulator MOS structures by the charge-pumping techniqueIEEE Transactions on Electron Devices, 1989
- Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradationIEEE Transactions on Electron Devices, 1989
- A pulsed interface-probing technique for MOS interface characterization at mid-gap levelsIEEE Transactions on Electron Devices, 1988
- A new charge pumping method of measuring Si-SiO2 interface statesJournal of Applied Physics, 1987
- A model for the charge-pumping current based on small rectangular voltage pulsesSolid-State Electronics, 1986
- A general model for interface-trap charge-pumping effects in MOS devicesSolid-State Electronics, 1985
- A reliable approach to charge-pumping measurements in MOS transistorsIEEE Transactions on Electron Devices, 1984
- Charge pumping in MOS devicesIEEE Transactions on Electron Devices, 1969