Ion-implantation-induced damage and resonant levels inPb1−xSnxTe
- 1 September 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (9) , 4735-4738
- https://doi.org/10.1063/1.328283
Abstract
The dependence of the carrier concentration on the implantation dose and on the temperature was investigated in ion‐implanted thin films of Pb1−xSnxTe (0⩽x1−xSnxTe (0⩽x⩽1) is suggested.This publication has 8 references indexed in Scilit:
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