Superconducting transition temperatures of thin V3Si layers formed by the interaction of V films with thinly oxidized Si wafers

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Abstract
Superconducting thin V3Si layers with overlying VOx layers have been formed by the interaction of thin evaporated V films (300–3500 Å thick) with thinly (∼100 Å thick) oxidized Si wafers between ∼650 and ∼1000 °C. V3Si layers having thicknesses up to ∼800 Å have been obtained. The growth of the V3Si layers has been observed to depend on the annealing temperature and time, and to be affected by the oxygen concentration in VOx layers formed on the V3Si layers, and by the disappearance of SiOx layers on the Si wafers. The transition temperatures of the V films annealed on the oxidized Si wafers can be interpreted with regard to proximity effects between the V3Si layers formed and overlying VOx layers simultaneously formed, and between the V3Si layers and underlying Si‐richer VSix layers additionally formed in the films.