Silicide formation at low temperatures by metal-SiO2 interaction
- 16 November 1973
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 20 (1) , K33-K36
- https://doi.org/10.1002/pssa.2210200152
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Characteristics of aluminum-titanium electrical contacts on siliconApplied Physics Letters, 1973
- Diffuse interface in Si (substrate)-Au (evaporated film) systemApplied Physics Letters, 1973
- Growth Kinetics Observed in the Formation of Metal Silicides on SiliconApplied Physics Letters, 1972
- Interdiffusion and compound formation in thin films of Pd or Pt on si single crystalsPhysica Status Solidi (a), 1971
- Low-temperature migration of silicon through metal films importance of silicon-;metal interfacePhysica Status Solidi (a), 1971