Infrared Spectroscopy Study of the Thermal Stability of Fluorinated SiO[sub 2] Thin Films
- 1 January 2001
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 148 (4) , F47-F50
- https://doi.org/10.1149/1.1353577
Abstract
Fluorinated SiO2SiO2 (SiOF) films containing up to about 4 atom % of F and prepared by plasma enhanced chemical vapor deposition from SiH4,SiH4, N2O,N2O, and CF4CF4 precursors have been analyzed by infrared (IR) spectroscopy and X-ray photoelectron spectroscopy to extract chemical and structural information. IR data have demonstrated that the F insertion in the SiO2SiO2 network induces a deep structural modification of the film, mainly consisting in the increase of the Si-O-Si bond angle and in the decrease of the angle value dispersion. Also, the polarizability of the system results are significantly affected. Thermal annealing processes in the 400-600°C range induce a marked F loss from the films. This phenomenon does not appreciably affect the peculiar structural properties of the SiOF films, because in all cases, the bond angles relative to the annealed films are equal or higher than those relative to the as deposited ones, while the polarizability of the system, sensitive to the F presence, is modified. © 2001 The Electrochemical Society. All rights reserved.Keywords
This publication has 15 references indexed in Scilit:
- Structural properties of fluorinated SiO2 thin filmsMicroelectronic Engineering, 2000
- Analysis of structural changes in plasma-deposited fluorinated silicon dioxide films caused by fluorine incorporation using ring-statistics based mechanismJournal of Applied Physics, 1999
- Properties of low dielectric constant fluorinated silicon oxide films prepared by plasma enhanced chemical vapor depositionThin Solid Films, 1998
- Structure and chemical composition of fluorinated SiO2 films deposited using SiF4/O2 plasmasJournal of Vacuum Science & Technology A, 1997
- Interaction between water and fluorine-doped silicon oxide films deposited by plasma-enhanced chemical vapor depositionJournal of Vacuum Science & Technology A, 1997
- Dielectric Constant and Stability of Fluorine‐Doped Plasma Enhanced Chemical Vapor Deposited SiO2 Thin FilmsJournal of the Electrochemical Society, 1996
- Characterization of Stable Fluorine-Doped Silicon Oxide Film Prepared by Biased Helicon Plasma Chemical Vapor DepositionJapanese Journal of Applied Physics, 1996
- Properties of Fluorinated Silicon Oxide Films Formed Using Fluorotriethoxysilane for Interlayer Dielectrics in Multilevel InterconnectionsJournal of the Electrochemical Society, 1996
- Formation of SiOF Films by Plasma-Enhanced Chemical Vapor Deposition Using (C2H5O)3SiFJapanese Journal of Applied Physics, 1996
- Low Dielectric Constant Interlayer Using Fluorine-Doped Silicon OxideJapanese Journal of Applied Physics, 1994