Electronic Recovery from Radiation Effects in CMNOS Structures

1 January 1971

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science

Vol. 18 (6) , 126-130
https://doi.org/10.1109/TNS.1971.4326423

Abstract

We consider the effects of ionizing radiation on Complementary Metal-Nitride-Oxide-Silicon structures for oxide thicknesses in the range of 20-50Å. The bi-directional radiation-induced threshold-voltage shifts in CMNOS structures are interpreted in terms of charge accumulation at the nitride-oxide interface. The electronic recovery of pre-irradiation threshold voltage levels by carrier transport through the thin oxide is shown experimentally.

Keywords

This publication has 4 references indexed in Scilit:

Permanent Radiation Effects in Hardened Al2O3 MOS Integrated Circuits
IEEE Transactions on Nuclear Science, 1970
Charge Transport and Storage in Metal-Nitride-Oxide-Silicon (MNOS) Structures
Journal of Applied Physics, 1969
RADIATION EFFECTS AND ELECTRICAL STABILITY OF METAL-NITRIDE-OXIDE-SILICON STRUCTURES
Applied Physics Letters, 1968
Effect of Electron Radiation on Silicon Nitride Insulated Gate Field Effect Transistors
IEEE Transactions on Nuclear Science, 1967