RADIATION EFFECTS AND ELECTRICAL STABILITY OF METAL-NITRIDE-OXIDE-SILICON STRUCTURES

1 June 1968

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 12 (11) , 385-387
https://doi.org/10.1063/1.1651866

Abstract

Radiation‐induced threshold voltage shifts in MNOS structures are measured as a function of oxide layer thickness. The shifts for negative biases vanish at an oxide thickness near 125 Å and remain negligible for positive biases at this thickness. Electrical stability for this thickness is maintained for gate voltages from −40 to +35 V.

Keywords

THRESHOLD VOLTAGE

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