Double-level copper interconnections using selective copper CVD
- 1 October 1992
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 21 (10) , 959-964
- https://doi.org/10.1007/bf02684203
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- TiN-encapsulized copper interconnects for ULSI applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Low-temperature chemical vapor deposition of high purity copper from an organometallic sourceChemistry of Materials, 1990
- Low-temperature metal-organic chemical vapor deposition (LTMOCVD) of device-quality copper films for microelectronic applicationsJournal of Electronic Materials, 1990
- Chemical Vapor Deposition of Copper from Copper (II) HexafluoroacetylacetonateJournal of the Electrochemical Society, 1989
- Reactive Ion Etching of Copper Films in SiCl4 and N2 MixtureJapanese Journal of Applied Physics, 1989
- Thin copper films by plasma CVD using copper-hexafluoro-acetylacetonateApplied Physics A, 1988
- Laser chemical vapor deposition of copperApplied Physics Letters, 1985
- Deposition kinetics of SiO2 filmJournal of Applied Physics, 1981