High-frequency study of nonequilibrium transport in heterostructure bipolar transistors

23 October 1989

journal article
conference paper
Published by AIP Publishing in Applied Physics Letters

Vol. 55 (17) , 1789-1791
https://doi.org/10.1063/1.102174

Abstract

We report results of studying nonequilibrium transport in heterostructure bipolar transistors at a millimeter-wave band. Increasing the total potential drop in the collector from 0.88 to 1.6 eV changes the measured intrinsic transit delay from 0.32 to 0.63 ps due to the increasing importance of intervalley scattering. Both the experimental and calculated data illustrate the role nonequilibrium transport and intervalley scattering have in determining the fundamental limits to device performance.

Keywords

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