Capacitance—Voltage Relations of Schottky and p—n Diodes in the Presence of both Shallow and Deep Impurities
- 1 January 1969
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 32 (1) , 81-89
- https://doi.org/10.1002/pssb.19690320110
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Evaluation of doping profiles from capacitance measurementsSolid-State Electronics, 1968
- Effects of deep impurities on n+p junction reverse-biased small-signal capacitanceSolid-State Electronics, 1968
- The capacitance of p-n junctionsSolid-State Electronics, 1967
- Frequency dependence of the reverse-biased capacitance of gold-doped silicon P+N step junctionsIEEE Transactions on Electron Devices, 1964
- The Charge and Potential Distributions at the Zinc Oxide ElectrodeBell System Technical Journal, 1960