Parasitic resistance in an MOS transistor used as on-chip decoupling capacitance
- 1 April 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 32 (4) , 574-576
- https://doi.org/10.1109/4.563679
Abstract
No abstract availableKeywords
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