Hydrogen diffusion and electronic metastability in amorphous silicon
- 1 April 1991
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 170 (1-4) , 69-81
- https://doi.org/10.1016/0921-4526(91)90108-q
Abstract
No abstract availableKeywords
This publication has 37 references indexed in Scilit:
- The defect density in amorphous siliconPhilosophical Magazine Part B, 1989
- Hydrogen-mediated model for defect metastability in hydrogenated amorphous siliconPhysical Review B, 1989
- Chemical-equilibrium model of impurity incorporation inn-typea-Si:HPhysical Review Letters, 1989
- Band tails, entropy, and equilibrium defects in hydrogenated amorphous siliconPhysical Review Letters, 1987
- Hydrogenated microvoids and light-induced degradation of amorphous-silicon solar cellsApplied Physics A, 1986
- Thermal-Equilibrium Defect Processes in Hydrogenated Amorphous SiliconPhysical Review Letters, 1986
- Light-induced metastable defects in hydrogenated amorphous silicon: A systematic studyPhysical Review B, 1985
- Growth morphology and defects in plasma-deposited a-Si:H filmsJournal of Non-Crystalline Solids, 1980
- Hydrogen evolution and defect creation in amorphous Si: H alloysPhysical Review B, 1979
- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977