Tight-binding calculation of the band offset at the Ge-GaAs (110) interface using a local charge-neutrality condition
- 15 May 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 33 (10) , 7386-7388
- https://doi.org/10.1103/physrevb.33.7386
Abstract
A tight-binding Green’s-function calculation of the electronic properties of the Ge-GaAs (110) interface is presented. The atomic charges in the vicinity of the interface are determined by use of a continued-fraction expansion technique. Approximate self-consistency is achieved through the use of a local neutrality condition which is shown to be justified in this context. Finally the band offset is calculated and compared to experimental and other calculated values.Keywords
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