A novel method to detect nonexponential transients in deep level transient spectroscopy
- 1 November 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (11) , 7397-7400
- https://doi.org/10.1063/1.330108
Abstract
In conventional Deep Level Transient Spectroscopy (DLTS) measurements, the analysis of the results is based upon the assumption of an exponential current or capacitance transient. We present experimental and computational results on a novel experimental method for determining when the assumption of exponentiality is not satisfied by the sample under study. The measurement may be performed without any changes in the conventional double-boxcar DLTS system.This publication has 10 references indexed in Scilit:
- The analysis of exponential and nonexponential transients in deep-level transient spectroscopyJournal of Applied Physics, 1981
- Transient distortion and DLTSSolid State Communications, 1981
- X-Y plotter capacitance meter interface for deep level spectroscopyJournal of Physics E: Scientific Instruments, 1981
- Transient distortion and nth order filtering in deep level transient spectroscopy (DnLTS)Solid-State Electronics, 1981
- Energy Levels in SiliconAnnual Review of Materials Science, 1980
- The effect of non-exponential transients on the determination of deep-trap activation energies by deep-level transient spectroscopyJournal of Physics C: Solid State Physics, 1979
- Novel variable-temperature chuck for use in the detection of deep levels in processed semiconductor wafersReview of Scientific Instruments, 1979
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Influence of deep traps on the measurement of free-carrier distributions in semiconductors by junction capacitance techniquesJournal of Applied Physics, 1974
- Frequency dependence of the reverse-biased capacitance of gold-doped silicon P+N step junctionsIEEE Transactions on Electron Devices, 1964